METHOD FOR MAKING A SEMICONDUCTOR STRUCTURE Russian patent published in 2007 - IPC H01L21/263 

FIELD: technology for producing semiconductor devices.

SUBSTANCE: method for making a semiconductor structure includes making isolating film on semiconductor substrate, making thin semiconductor film on isolating film. After making of isolating film, structure is treated with protons in dose of 1·10¹⁵-5·10¹⁶ cm^-2 with energy of 20-50 keV with following annealing at temperature of 200÷400°C during 10-20 seconds.

EFFECT: decreased mechanical strains in semiconductor devices resulting in manufacturability, improved parameters, increased reliability and increased percentage of non-defective output.

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