ACTIVE ELEMENT OF SEMICONDUCTOR CROSS-BEAM LASER (VERSIONS) Russian patent published in 2001 - IPC

FIELD: quantum electronic. SUBSTANCE: active element is, essentially, set of rectangular parallelepipeds made of semiconductor material and arranged in stepwise manner on common refrigerant line. Two parallel edges of each parallelepiped form optical cavity; edge being excited is perpendicular to them. Cavity edges of all parallelepipeds of set are relatively parallel. Distance between planes of edges being excited in adjacent parallelepipeds does not exceed depth of parallelepiped cavity edge zone wherefrom laser beam is emitted. As an alternative each of parallelepipeds on side excited by edge beam bears equidistant grooves whose depth is greater than that of exciting-beam penetration in parallelepiped material. Parallelepipeds are relatively arranged so that grooves of one parallelepiped are at half the distance between grooves of adjacent one; grooves may be filled with absorbing material. EFFECT: enhanced efficiency and radiation power; reduced lasing threshold and beam divergence. 3 cl, 5 dwg