MEMORY DEVICE WITH ELECTRIC PROBE READ-OUT Russian patent published in 2003 - IPC

FIELD: computer engineering, data storage devices especially compact portable ones. SUBSTANCE: proposed memory device has memory medium covering semiconductor substrate and incorporating local memory areas of nanometric dimensions, conducting probes, and means for displacing them in parallel with memory medium, as well as circuits for detecting currents carried by probes during data read-out. Device is characterized in that current detecting circuits are made on semiconductor substrate under memory medium in the form of integrated-circuit matrix of micron-size charge-sensing amplifiers. EFFECT: reduced size of amplifier input circuits and memory device, enhanced sensitivity, speed, noise immunity, density, and information content. 1 dwg