METHOD FOR PRODUCING INTEGRATED CIRCUITS WITH SEMICONDUCTOR COMPONENTS Russian patent published in 2002 - IPC

Abstract RU 2181222 C2

FIELD: microelectronics. SUBSTANCE: method includes deposition of thick superconducting film onto ceramic substrate, high-temperature treatment and milling of film. Ceramic substrate is first milled according to process pattern of circuit, depressions of profile obtained in the process are filled with dry powder of high-temperature conductor Yba2Cu3O7. Then substrate is subjected to high- temperature treatment in oxygen environment at 950 C. Such treatment provides for enhanced density of critical transport current through interconnections and Josephson junctions. Hybrid and other integrated circuits produced by this method may be used for manufacturing superconductor quantum interference detectors and miscellaneous thin- film high-temperature superconductor pieces of equipment. EFFECT: reduced probability of peeling circuit components off the substrate during high-temperature treatment of the latter. 6 dwg

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RU 2 181 222 C2

Authors

Firsov N.I.

Novikov I.L.

Khusnutdinov R.F.

Kvasov S.B.

Dates

2002-04-10Published

2000-05-06Filed