METHOD FOR GENERATING MULTILAYER STRUCTURES ON BOTH SIDES OF SUBSTRATE Russian patent published in 2002 - IPC

FIELD: superconductor engineering; generation of semiconductor-insulator-semiconductor structures. SUBSTANCE: method proposed for generating multilayer structures from YBCuO materials on both sides of substrate involves laser ablation procedure and includes following operations: substrate is installed inside cylindrical furnace on holder with offset center of gravity at distance of 1-3 cm from target; holder is locked in position along normal to target being sprayed. As soon as film of desired thickness is deposited on one side of substrate, holder lock is carried away and substrate is turned through 180 deg. Then film is evaporated on other side of substrate without interrupting the process from same target and at same parameters of laser radiation, pressure, and temperature. Substrate is secured in holder made in the form of ring with offset center of gravity. In this way structures of different electrophysical properties are generated on substrate surfaces in single process cycle without varying laser radiation parameters, pressure, and temperature. EFFECT: improved quality and morphology of structure layers free from splashes. 3 cl