DEVICE FOR HEAT TREATMENT OF SEMICONDUCTOR PLATES Russian patent published in 2002 - IPC

FIELD: semiconductor manufacture. SUBSTANCE: device for heat treatment of at least one semiconductor plate has reactor chamber holding material which is actually transparent for radiation in wavelengths from about 200 to about 800 nanometers wherein at least one semiconductor plate is secured. At least part of chamber may be covered with coating material essentially reflecting infrared radiation. Radiation source conveys radiation energy to at least one semiconductor plate through reactor coating and chamber. Radiation source may include ultraviolet gas-discharge lamp, infrared filament-halide lamp, or metal-halide gas-discharge lamp. Coating may be applied to inner or outer surface of reactor chamber. When chamber has inner and outer walls, either inner or outer wall may be coated. EFFECT: enhanced quality of semiconductor plate heat treatment. 10 cl, 6 dwg