FIELD: semiconductor devices, digital instruments, and integrated circuits resistant to destabilizing factors. SUBSTANCE: method includes formation of silicon film on single-crystalline or amorphous insulating substrate and ultrasonic treatment of structure obtained with chemically inactive liquid at frequency of 20-40 kHz for 60-90 min with structure secured between wafers made of material, 1.5-3.0 mm thick, 50 to 60 MPa in hardness, with diameter not smaller than that of structure. In addition wafer surface on side contacting structure surface has microscopic roughness not over 2.5 mcm and on side contacting liquid medium, 5-10 mcm. EFFECT: improved structural perfection of silicon films. 2 cl, 2 tbl, 1 ex
