FIELD: manufacture of semiconductor devices. SUBSTANCE: method for treatment of silicon-on-sapphire structures designed for manufacturing digital instruments and integrated circuits resistant to destabilizing factors such as radiation involves coating of sapphire substrate with silicon film and cyclic low-temperature treatment of structures in liquid nitrogen each cycle alternating every 30-60 s and followed by heating them to room temperature in liquid medium, as well as measurement of film refractive index in the course of treatment; used as liquid medium for heating structures to room temperature is aqueous solution of hydrofluoric acid; upon holding structures in this solution refractive index of not only film but also of substrate is measured and treatment is ceased when one of most slowly varying refractive indices attains steady state value. EFFECT: enhanced quality of silicon-on-sapphire structure layers of devices due to their better quality. 1 tbl
