METHOD FOR GETTER TREATMENT OF SEMICONDUCTOR PLATES Russian patent published in 1999 - IPC

FIELD: manufacture of digital devices and integrated circuits. SUBSTANCE: idle side of original substrate plates is irradiated by medium-energy ions and then plates are annealed; prior to irradiating, plates are elastically deformed by bending them so that their effective side becomes convex and then they are subjected to ultrasonic treated, while still deformed, with chemically inactive fluid at frequency of 20-40 kHz for 60-90 min. EFFECT: improved structural perfection of plates due to reducing flaw concentration in them. 1 cl, 1 tbl, 1 ex