FIELD: manufacturing of semiconductor instruments. SUBSTANCE: method involves generation of porous silicon layer on idle side of substrate by means of anode treatment in solution of hydrofluoric acid, elastic deformation of substrate during process of anode treatment, substrate firing in noble gas, elastic deformation of substrate in opposite direction during firing, oxidation of porous silicon and removal and oxidized layer. EFFECT: decreased number of flaws and background additives. 2 tbl
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