SEMICONDUCTOR AMPLIFYING ELEMENT AND SEMICONDUCTOR OPTICAL AMPLIFIER Russian patent published in 2003 - IPC

FIELD: fiber-optic communication and data transmission systems, superhigh-speed optical computing and communication systems, medicine, laser engineering. SUBSTANCE: novelties are retrofitting of semiconductor amplifying element heterostructure, comprehensive approach to selection of composition and thickness of heterostructure layers ensuring operation in narrow transition region for organizing radiation emission from active layer of mentioned semiconductor amplifying element of proposed optical amplifier, and also same or similar heterostructure is proposed to be used for injection laser. All these novelties provide for enhancing output radiation power, efficiency, and reliability of amplifier at reduced output radiation divergence angles, minimizing deviation of its direction from normal to optical face plane, improving distribution of near and distant radiation fields and temperature dependencies of amplifying element output parameters, reducing ohmic and thermal resistances, and reducing mechanical stresses. EFFECT: facilitated manufacture, enlarged functional capabilities. 25 cl, 6 dwg