FIELD: physics.
SUBSTANCE: diode multi-beam source of coherent laser radiation comprises a master laser, integrally and optically connected to a linear amplifier, two perpendicular amplifiers, integrally and optically connected to the linear amplifier. The master laser and said amplifiers are in form of a single heterostructure. The heterostructure comprises an active layer and two limiting layers and a radiation influx area having an influx layer. The heterostructure is characterised by the ratio of the refractive index nef of the heterostructure to the refractive index nvt of the influx layer. The ratio of nef to nvt is determined from a range extending from one to one minus gamma, where gamma are defined by a number much less than one. The linear amplifier is positioned so that the optical axis of radiation propagation from the master laser coincides with the axis of the linear amplifier. Each perpendicular amplifier has an output edge and is positioned so that its optical axis is at a right angle to the axis of the linear amplifier. There is an element near the crossing point of amplifier axes in order to facilitate flow of a portion of radiation from the linear amplifier to a perpendicular amplifier. This element includes a reflecting plane which intersects the active layer and part of the influx area of the heterostructure within 20% to 80% of the thickness of the influx layer and which forms a 45° angle of inclination with amplifier axes.
EFFECT: high power of laser radiation, high efficiency, reliability, longer operating life and modulation rate with simplification of the manufacturing technique.
20 cl, 8 dwg
Title | Year | Author | Number |
---|---|---|---|
DIODE MULTI-BEAM SOURCE OF COHERENT LASER RADIATION | 2008 |
|
RU2398325C2 |
DIODE LASER, INTEGRATED DIODE LASER AND INTEGRATED SEMICONDUCTOR OPTICAL AMPLIFIER | 2008 |
|
RU2391756C2 |
INJECTION LASER | 2005 |
|
RU2300835C2 |
SEMICONDUCTOR AMPLIFYING ELEMENT AND SEMICONDUCTOR OPTICAL AMPLIFIER | 2002 |
|
RU2197047C1 |
SEMICONDUCTOR OPTICAL AMPLIFIER | 1998 |
|
RU2134007C1 |
INJECTION LASER | 1998 |
|
RU2142665C1 |
INJECTION LASER | 2002 |
|
RU2197048C1 |
HETERO-STRUCTURE, INJECTION LASER, SEMICONDUCTOR AMPLIFYING ELEMENT AND SEMICONDUCTOR OPTICAL AMPLIFIER | 2004 |
|
RU2278455C1 |
INJECTION-TYPE RADIATOR | 2005 |
|
RU2300826C2 |
SEMICONDUCTOR LASER | 1996 |
|
RU2109382C1 |
Authors
Dates
2011-05-27—Published
2009-07-17—Filed