INJECTION LASER Russian patent published in 2007 - IPC H01S5/00 

FIELD: optoelectronic engineering; compact high-power semiconductor lasers.

SUBSTANCE: proposed laser has lasing heterostructure incorporating active layer, waveguide and boundary layers, butt-end faces, longitudinal intensifying axis, and optical resonator. Series of alternating radiation-intensifying region and radiation output regions is formed in heterostructure. Radiation admission semiconductor layer is made in output layer. Composition and thickness of heterostructure boundary layer in output region are chosen to enable partial restriction of radiation in heterostructure. Each output region is bounded by output faces. Provision is made for reducing laser radiation density at output faces with controlled directivity and convergence.

EFFECT: enhanced radiation power, operating reliability, and efficiency, facilitated manufacture of laser.

15 cl, 11 dwg