INJECTION-TYPE RADIATOR Russian patent published in 2007 - IPC H01L33/00 H01S5/32 

FIELD: high-efficiency solid-state radiation sources operating in broad wavelength band, such as light-emitting diodes.

SUBSTANCE: proposed radiator has semiconductor heterostructure incorporating active layer, waveguide and limiting layers, semiconductor radiation-admission layer, and sprayed-metal layer. Sequence of alternating radiation generation and radiation output regions is formed in heterostructure on longitudinal optical line. Two external longitudinal surface heterostructures in each generation region and its two longitudinal lateral sides are surrounded by material having minimal possible refractive indices relative to heterostructure effective refractive index in generation region and maximal possible reflectance of radiation. Semiconductor admission layer rising above generation region surface is made in output region in addition to heterostructure layers. Composition and thickness of heterostructure limiting layer in output region adjacent to admission layer are chosen to ensure partial limitation of radiation in heterostructure. Each of output regions is enclosed on opposite ends with output edges formed relative to generation-region external surface at definite linear tilting angles; ratio of admission layer refractive index n_in to effective refractive index n_ef of heterostructure incorporating admission layer is greater than unity.

EFFECT: enhanced efficiency and reliability of injection-type radiator characterized in surface output of radiation in the form of plurality of output beams.

18 cl, 14 dwg