DIODE LASER, INTEGRATED DIODE LASER AND INTEGRATED SEMICONDUCTOR OPTICAL AMPLIFIER Russian patent published in 2010 - IPC H01S5/32 

FIELD: physics.

SUBSTANCE: diode laser includes a heterostructure which contains at least one active layer, at least two limiting layers, a radiation influx region which is transparent to the radiation which has at least an influx layer. The heterostructure is characterised by ratio of refraction index n_ef of the heterostructure to the refraction index n_in of the influx layer. The ratio of n_ef to n_in is defined in the range from one plus delta to on minus gamma, where delta and gamma are defined by a number much less than one and gamma is greater than delta. At a certain distance from both lateral sides of the active region with flowing current, there are radiation limiting regions, penetrating from the outer layer inside the heterostructure to at least the active layer. Thickeness of the layers of the heterostructure lies in the interval from (λ/4n_ef) mcm to (4λ/n_ef) mcm, where λ is the laser radiation wavelength. The integrated diode laser is a combination of integrally connected diode lasers placed along the optical axis of propagation of the laser radiation. The integrated semiconductor optical amplifier includes integrally connected master diode laser and a semiconductor amplifier element. Integral connection in the devices is achieved through the radiation influx region.

EFFECT: lower density of threshold generation currents, improved stability of mode generation, increased power of the laser radiation and strength of blind reflectors of the resonator.

16 cl, 8 dwg