FIELD: fiber-optic communication and data transmission systems, high-speed computers, medical instruments. SUBSTANCE: heterostructure for injection lasers is characterized in retrofitted design, comprehensive choice of composition and thickness of its layers ensuring its functioning in narrow transition region for organizing emission of rays from active layer. Heterostructure is distinguished by reduced thickness of emission region, reduced ohmic and thermal resistances, reduced mechanical stresses. EFFECT: simplified design, facilitated manufacture. 13 cl, 4 dwg
Title | Year | Author | Number |
---|---|---|---|
INJECTION LASER | 2002 |
|
RU2197048C1 |
SEMICONDUCTOR AMPLIFYING ELEMENT AND SEMICONDUCTOR OPTICAL AMPLIFIER | 2002 |
|
RU2197047C1 |
HETERO-STRUCTURE, INJECTION LASER, SEMICONDUCTOR AMPLIFYING ELEMENT AND SEMICONDUCTOR OPTICAL AMPLIFIER | 2004 |
|
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DIODE LASER, INTEGRATED DIODE LASER AND INTEGRATED SEMICONDUCTOR OPTICAL AMPLIFIER | 2008 |
|
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DIODE MULTI-BEAM SOURCE OF COHERENT LASER RADIATION | 2008 |
|
RU2398325C2 |
INJECTION-TYPE RADIATOR | 2005 |
|
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DIODE MULTI-BEAM SOURCE OF COHERENT LASER RADIATION (VERSIONS) | 2009 |
|
RU2419934C2 |
INJECTION LASER | 2005 |
|
RU2300835C2 |
INJECTION LASER | 1998 |
|
RU2142665C1 |
INJECTION NON-COHERENT LIGHT SOURCE | 1998 |
|
RU2142661C1 |
Authors
Dates
2003-01-20—Published
2002-02-18—Filed