SEMICONDUCTOR OPTICAL AMPLIFIER Russian patent published in 1999 - IPC

FIELD: quantum electronics. SUBSTANCE: amplifier has master input collimated- light source cut in amplifying element during amplifier operation at input angle δ equal to angle of light incidence on input surface; amplifying element is built around semiconductor laser heterostructure located on light input/output region through which propagated light can be admitted and brought out; region is translucent for it; first optical faces on end sides limit active amplifying region; second ones function as boundaries for light input/output region and form respective angles ψ₁, ψ₂ and ψ₃, φ₄ with plane perpendicular to amplification axis; insertion loss of operating device α_in, cm^-1 for amplified light emitted by active layer at interface between sublayer of boundary layer and light input/output region is proposed to be found from range of values limited by maximal and minimal insertion losses, for amplified light and for higher value of α_inmax, cm^-1 range, by permissible maximum value or operating current density; input angle δ is assumed to be dependent on inclination angle ψ₃ and effective refractive index of laser heterostructure together with light input/output region having common refractive index eff of light input/output region are interrelated by definite equation. In this way, area of input and output apertures is enlarged, astigmatism divergence angle of amplified output light is reduced, input and output of amplified light can be effected in different directions relative to optical amplification axis in active layer, and effective length of amplification region is enlarged. EFFECT: improved performance characteristics. 51 cl, 25 dwg, 1 tbl, 2 ex