FIELD: quantum electronic equipment, in particular, high efficiency, powerful and compact semiconductor light sources with narrow beam pattern to be used in fiber-optical communication and information transmission systems, optical high- speed computational and switch-board equipment, medical devices, laser equipment, including lasers with doubled output beam frequency, pumping of solid-state and fiber-optical lasers. SUBSTANCE: device has specific design of optical resonator, which active population includes not only active population of amplification region with output amplified beam, but also passive population of input region with respective content, height and number of layers of laser heterogeneous structure, as well as design of optical planes of input region, resistance contacts, and metal plating layers. This results in practical separation of forming region for laser beam modes, and injection region and stimulated recombination of non-equilibrium carriers. In addition invention discloses design of high-efficiency lasers which output their beams in direction which is perpendicular to plane of active layer, as well as lasers with multiple laser beams, in particular, with autonomous control of each beam. EFFECT: decreased threshold current density, increased differential efficiency, decreased astigmatism and divergence of output beam in vertical and horizontal dimensions, improved spectral characteristics of laser beam, increased range of output directions with respect to longitudinal amplification axis in active layer, increased effective length of optical resonator, increased output power, longer service life, increased reliability of operations of injection laser, in particular, multiple beam lasers, simplified manufacturing. 35 cl, 22 dwg, 1 tbl
Title | Year | Author | Number |
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INJECTION LASER | 1997 |
|
RU2133534C1 |
INJECTION LASER | 2005 |
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INJECTION LASER | 2002 |
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SEMICONDUCTOR OPTICAL AMPLIFIER | 1998 |
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SEMICONDUCTOR AMPLIFYING ELEMENT AND SEMICONDUCTOR OPTICAL AMPLIFIER | 2002 |
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RU2197047C1 |
HETERO-STRUCTURE, INJECTION LASER, SEMICONDUCTOR AMPLIFYING ELEMENT AND SEMICONDUCTOR OPTICAL AMPLIFIER | 2004 |
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RU2278455C1 |
DIODE LASER, INTEGRATED DIODE LASER AND INTEGRATED SEMICONDUCTOR OPTICAL AMPLIFIER | 2008 |
|
RU2391756C2 |
SEMICONDUCTOR LASER | 1996 |
|
RU2109382C1 |
HETEROSTRUCTURE | 2002 |
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RU2197049C1 |
INJECTION NON-COHERENT LIGHT SOURCE | 1998 |
|
RU2142661C1 |
Authors
Dates
1999-12-10—Published
1998-08-10—Filed