INJECTION LASER Russian patent published in 1999 - IPC

Abstract RU 2142665 C1

FIELD: quantum electronic equipment, in particular, high efficiency, powerful and compact semiconductor light sources with narrow beam pattern to be used in fiber-optical communication and information transmission systems, optical high- speed computational and switch-board equipment, medical devices, laser equipment, including lasers with doubled output beam frequency, pumping of solid-state and fiber-optical lasers. SUBSTANCE: device has specific design of optical resonator, which active population includes not only active population of amplification region with output amplified beam, but also passive population of input region with respective content, height and number of layers of laser heterogeneous structure, as well as design of optical planes of input region, resistance contacts, and metal plating layers. This results in practical separation of forming region for laser beam modes, and injection region and stimulated recombination of non-equilibrium carriers. In addition invention discloses design of high-efficiency lasers which output their beams in direction which is perpendicular to plane of active layer, as well as lasers with multiple laser beams, in particular, with autonomous control of each beam. EFFECT: decreased threshold current density, increased differential efficiency, decreased astigmatism and divergence of output beam in vertical and horizontal dimensions, improved spectral characteristics of laser beam, increased range of output directions with respect to longitudinal amplification axis in active layer, increased effective length of optical resonator, increased output power, longer service life, increased reliability of operations of injection laser, in particular, multiple beam lasers, simplified manufacturing. 35 cl, 22 dwg, 1 tbl

Similar patents RU2142665C1

Title Year Author Number
INJECTION LASER 1997
  • Shvejkin V.I.
  • Bogatov A.P.
  • Drakin A.E.
  • Kurnjavko Ju.V.
RU2133534C1
INJECTION LASER 2005
  • Shvejkin Vasilij Ivanovich
RU2300835C2
INJECTION LASER 2002
  • Shvejkin V.I.
RU2197048C1
SEMICONDUCTOR OPTICAL AMPLIFIER 1998
  • Shvejkin V.I.
  • Bogatov A.P.
  • Drakin A.E.
  • Kurnjavko Ju.V.
RU2134007C1
SEMICONDUCTOR AMPLIFYING ELEMENT AND SEMICONDUCTOR OPTICAL AMPLIFIER 2002
  • Shvejkin V.I.
RU2197047C1
HETERO-STRUCTURE, INJECTION LASER, SEMICONDUCTOR AMPLIFYING ELEMENT AND SEMICONDUCTOR OPTICAL AMPLIFIER 2004
  • Shvejkin Vasilij Ivanovich
RU2278455C1
DIODE LASER, INTEGRATED DIODE LASER AND INTEGRATED SEMICONDUCTOR OPTICAL AMPLIFIER 2008
  • Shvejkin Vasilij Ivanovich
  • Gelovani Viktor Archilovich
  • Sonk Aleksej Nikolaevich
  • Jarema Igor' Petrovich
RU2391756C2
SEMICONDUCTOR LASER 1996
  • Shvejkin V.I.
RU2109382C1
HETEROSTRUCTURE 2002
  • Shvejkin V.I.
RU2197049C1
INJECTION NON-COHERENT LIGHT SOURCE 1998
  • Shvejkin V.I.
RU2142661C1

RU 2 142 665 C1

Authors

Shvejkin V.I.

Dates

1999-12-10Published

1998-08-10Filed