PROCEDURE FORMING IMPURITY CONTOUR IN SEMICONDUCTOR AND DIELECTRIC MATERIALS Russian patent published in 2003 - IPC

FIELD: formation of very-low and very-deep p-n junctions in semiconductor materials. SUBSTANCE: procedure can also find use for clearing contaminating impurities, for total or local change of their optical properties and color. In contrast to known methods of formation of impurity contours by way of diffusion or electric diffusion from limited source there is proposed radiation electrothermodiffusion method consisting in execution of thermoelectric diffusion in electric field with intensity over 10.0 W/cm at temperature of 300-2000 C and in simultaneous irradiation of samples by electron fluxes with energy 0.25-10.0 MeV and flux 1¹⁵-10¹⁹e/cm². EFFECT: creation of electrically controlled and effective diffusion with relatively soft electron irradiation which facilitates formation of easily annealed point defects of type of vacancy and atom in interstitial site. 1 cl, 1 dwg