FIELD: registration of hydrogen and gases of methane group in gas, coal and other branches of industry. SUBSTANCE: field-effect transistor in gas-sensitive pickup is placed on dielectric layer formed on surface of monocrystalline silicon. Gate of field-effect transistor is fitted with two contacts to ensure its electric heating to temperature of decomposition of gases of methane group. Gate is fabricated from catalytically active material, regions of drain and source are made of platinum silicide, region of channel is produced form iron silicide. Pickup can contain additional heaters made of material which is catalyst for decomposition of gases of methane group. EFFECT: decreased energy consumption, increased reproducibility of parameters and improved adaptability to manufacture of pickup. 4 cl, 2 dwg
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Authors
Dates
2003-01-20—Published
2000-11-20—Filed