FIELD: electricity.
SUBSTANCE: power semiconductor device includes power locked thyristor and cascode MOS-driver (metal-oxide-semiconductor); crystals of power locked thyristor and MOS-transistors are placed in one pellet housing, and nanocrystal diamond films obtained by gas-phase synthesis or plasma-gas-phase synthesis are used as heat conducting electric insulating layers. Groups of parallel connected crystals uniformly located around crystal of locked thyristor can be used as MOS-transistors.
EFFECT: development of high-power hybrid switch on power locked thyristor with cascode MOS-driver in one pellet housing.
2 cl, 3 dwg
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