TARGET FOR ION-PLASMA SPUTTERING Russian patent published in 2015 - IPC C23C14/35 C04B35/453 

Abstract RU 2568554 C2

FIELD: chemistry.

SUBSTANCE: target for ion-plasma sputtering is made on the basis of metal oxide and contains carbon. Concentration of carbon in target is selected on condition of provision at sputtering temperature of thermal effect from exothermic reaction in oxidation of carbon by metal oxide oxygen and free oxygen in sputtering zone, lower integral heat removal in said zone, and constitutes 0.1-20 at %. Metal oxide is represented by zinc oxide.

EFFECT: invention will make it possible to improve characteristics of applied layers, increase degree of target application and reduce energy consumption in the process of sputtering.

2 cl, 2 dwg

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Authors

Abduev Aslan Khadzhimuratovich

Abduev Marat Khadzhi-Muratovich

Asvarov Abil Shamsudinovich

Akhmedov Akhmed Kadievich

Kamilov Ibragimkhan Kamilovich

Dates

2015-11-20Published

2013-07-30Filed