FIELD: epitaxy technology.
SUBSTANCE: invention relates to the epitaxy technology of doped germanium layers based on the combination in one vacuum chamber of simultaneous deposition on a boron-doped silicon substrate for germanium and boron diffusion into a growing germanium layer from the near-surface region of this substrate, and can be used for the production of semiconductor structures. The invention is aimed at the stable provision of the specified degrees of a boron doping grown single-crystal germanium layer made on boron-doped silicon substrate in the absence of defects of the specified growth in a wide range of doping degrees based on a combination in one vacuum chamber of germanium reduction from germanium in the presence of a heating element resistively heated and made of a refractory metal such as tantalum, and the receipt of the alloying element boron into the growth zone of the specified germanium layer from the surface of the heated specified substrate, and simultaneously ensuring the possibility of technological accumulation of atomic boron under the specified surface as a result of preliminary vacuum annealing of this substrate, and also an increase in the manufacturability of the proposed method as a result of ensuring the possibility of subsequent (after the specified vacuum annealing) epitaxial growth on the surface of such substrates of a germanium layer with simultaneous diffusion of atomic boron into the zone of said growth from the surfaces of these substrates in one vacuum chamber in accordance with the alternation of operations of a single technological cycle. To achieve this result, a method is proposed for the manufacture of an epitaxial thin-film germanium structure doped with boron by forming an atomic flow directed to the substrate in a vacuum chamber, formed from germanium recovered from the gas phase at high temperature, and ensuring simultaneous with the growth of a layer of monocrystalline germanium on the surface of the substrate, the diffusion of atomic boron into the zone of said growth from the surface this substrate, characterized by the fact that before the above epitaxial germanium layer cultivation, a substrate made of boron-doped silicon is subjected to vacuum annealing at a temperature selected from the range of 1000-1300°C for 10-60 minutes for the evaporative diffusion accumulation of atomic boron in the near-surface region of the silicon material of this substrate, after which the proposed cultivation is carried out by forming at high vacuum a the substrate of the atomic flux formed from germanium subjected to the specified annealing, recovered from germane in the presence of a heating element made of a refractory metal such as tantalum, resistively heated at the temperature of the specified heating element 1300-1550°C, with simultaneous diffusion of atomic boron into the said growth zone from the surface of the same substrate heated at 300-400°C with atomic boron previously diffusionally accumulated under its surface in the specified manner, moreover, the degree of boron doping of the silicon substrate material and the temperature of vacuum annealing of the specified substrate from the specified temperature range are selected depending on the required degree of boron doping of the growing germanium layer.
EFFECT: stable provision of the specified degrees of a boron doping grown single-crystal germanium layer made on the boron-doped silicon substrate.
3 cl, 1 dwg
