FIELD: physics.
SUBSTANCE: polariser is made using a method which involves depositing a metal layer on top of a transparent substrate and a first material to form a surface layer on top of the metal layer; inducing essentially uniform voltage aligned in a first direction in the surface layer, exposing the surface layer to a stream of ions until formation of a nanomask containing an essentially periodic array of essentially parallel elongated elements having a wavy cross section. At least some of these elements have the following structure in the cross section: an inner region made from a first material and a first outer region made from a second material which covers the a first part of the inner region. The second material is formed by modifying the first material with a stream of ions. Further, etching is carried out through the surface area and through the metal layer up to the surface of the optically transparent substrate using the nanomask to transfer the pattern of the elongated elements into the metal layer, and parts of the surface layer remaining after etching are removed from the metal layer.
EFFECT: efficient methods of forming large arrays of nanoconductors with a period of 150 nm or less.
42 cl, 10 dwg
Title | Year | Author | Number |
---|---|---|---|
LIGHT-EMITTING DIODE WITH NANOSTRUCTURED LAYER AND METHODS OF MANUFACTURING AND USAGE | 2011 |
|
RU2569638C2 |
METHOD FOR FORMING ORDERLY UNDULATING NANOSTRUCTURES (VARIANTS) | 2003 |
|
RU2240280C1 |
METHOD FOR SHAPING NANOTOPOGRAPHY ON FILM SURFACE | 2002 |
|
RU2204179C1 |
METHOD FOR PRODUCING SILICON NANOSTRUCTURE, LATTICE OF SILICON QUANTUM CONDUCTING TUNNELS, AND DEVICES BUILT AROUND THEM | 1999 |
|
RU2173003C2 |
MONOCRYSTALLINE FILMS OF METALS | 2017 |
|
RU2691432C1 |
METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR WITH PERIODICALLY DOPED CHANNEL | 2001 |
|
RU2191444C1 |
LIGHT EMITTING DEVICE BONDED TO A SUPPORT SUBSTRATE | 2012 |
|
RU2604956C2 |
METHOD OF MODIFYING SEMICONDUCTOR FILM BY LASER IRRADIATION | 2013 |
|
RU2553830C2 |
METHOD OF MAKING SEMICONDUCTOR DEVICE STRUCTURES BASED ON BLANK SUBSTRATE CLONING (VERSIONS) | 2013 |
|
RU2546858C1 |
PHOTOSENSITIVE DEVICE AND METHOD OF ITS MANUFACTURE | 2018 |
|
RU2685032C1 |
Authors
Dates
2011-02-27—Published
2006-06-01—Filed