MICROHEATER FOR SEMICONDUCTOR CHEMICAL GAS SENSOR Russian patent published in 2023 - IPC H01L23/34 G01N27/14 

Abstract RU 2797145 C1

FIELD: analytical instrumentation.

SUBSTANCE: invention is related to means for selective detection and recognition of gaseous media. The semiconductor gas sensor contains a microheater designed for local uniform heating of the surface of the gas-sensitive area, while the microheater for the semiconductor gas sensor includes a single-crystal silicon plate with a dielectric membrane placed on it, metal elements located on the dielectric membrane, made isolated from each other by means of a dielectric layer and including heating elements that form the heating area, contact electrodes located between the heating elements, contact pads, a lyophobic layer containing windows located in the projections of the heating area and contact pads, which serves as a mechanical barrier for the liquid or the suspension used to form a gas-sensitive layer in the heating area.

EFFECT: provision of possibility of applying a gas-sensitive material to the surface of a thin dielectric membrane in the heating area of a microheater by inkjet microprinting to obtain a layer of the required geometry (shape and thickness) without spreading the material outside the heating area during its application.

13 cl, 5 dwg

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RU 2 797 145 C1

Authors

Krivetskij Valerij Vladimirovich

Amelichev Vladimir Viktorovich

Sagitova Alina Salavatovna

Polomoshnov Sergej Aleksandrovich

Generalov Sergej Sergeevich

Nikolaeva Anastasiya Vladimirovna

Dates

2023-05-31Published

2022-10-27Filed