POWERFUL PULSE MICROWAVE PHOTODETECTOR Russian patent published in 2018 - IPC H01L31/10 

FIELD: instrument engineering.

SUBSTANCE: invention relates to the field of development and manufacture of high-power photosensitive semiconductor devices based on GaAs, in particular to pulsed semiconductor super high frequency (UHF) photodetectors. Powerful pulsed microwave photodetector of laser radiation based on heterostructure contains substrate 2 from n-GaAs, layer 3 from n-Al_xGa_1-xAs with x=0.35–0.60 at the beginning of the layer growth at the boundary with the substrate to x=0.10–0.15 at the end of the layer growth and with parameter gradient "x" in the range of 25–60 cm^-1, layer 4 of n₀-GaAs 0.5–2 microns thick with a carrier concentration (0.5–2.0)⋅10¹⁶ cm^-3, layer 5 of p-Al_xGa_1-xAs with x=0.15–0.30 at the beginning of the layer growth to x=0.05–0.10 at the end of the layer growth, contact layer 6 of p⁺-GaAs and solid ohmic contacts 1, 7.

EFFECT: invention provides improved performance, reduced ohmic and heat losses, as well as reduced optical losses.

8 cl, 2 dwg, 2 ex