LOW-INDUCTANCE CONTROLLED TURN-OFF THYRISTOR Russian patent published in 2003 - IPC

FIELD: power semiconductor engineering. SUBSTANCE: semiconductor component such as thyristor has case accommodating semiconductor substrate, anode, cathode, circular lead of gate electrode projecting from case, and circular lead of auxiliary cathode projecting from case to provide contact for auxiliary cathode. Auxiliary cathode lead and/or gate electrode lead have at least one slit on their perimeter. Semiconductor device component such as thyristor designed for low-inductance coupling with control circuit mounted on interconnecting board is disposed in wiring hole of the latter so that gate electrode lead occurs on one side of interconnecting board in parallel to the latter and protrudes beyond wiring hole so that it is connected on one end of interconnecting board. Cathode is mounted on other end of interconnecting board wherein it is connected to the latter. Auxiliary cathode lead that forms connection of cathode to interconnecting board is made in the form of concentric round ring protruding from case beyond wiring hole in different directions. EFFECT: simplified design, facilitated installation and wiring, improved heat transfer on cathode end. 12 cl, 19 dwg