FIELD: power electronics.
SUBSTANCE: semiconductor element incorporating cathode and anode is manufactured as follows: braking region is introduced in semiconductor substrate on anode end, then cathode structure is formed on opposite end, whereupon substrate thickness is reduced on end opposing that of cathode, and during next step anode is formed on this end. Semiconductor element produced in the process has braking region on anode end, its doping density profile corresponding to end section of doping profile.
EFFECT: reduced thickness and cost of semiconductor element.
9 cl 2 dwg
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