METHOD FOR MANUFACTURING TWO-OPERATION DIODE THYRISTOR WITH CUT-OFF LAYER ON ANODE SIDE AND WITH TRANSPARENT ANODE EMITTER Russian patent published in 2003 - IPC

FIELD: electrical and electronic engineering. SUBSTANCE: two- stage method is proposed for manufacturing highly transparent anode emitter 2 in two-position thyristor 1. During first stage dope is introduced by diffusion method into anode emitter 2, its thickness being greater than 0.5 mcm and smaller than 5 mcm and dope concentration being higher than 10¹⁷cm³ and lower than 5.10¹⁸cm³. Efficiency of anode emitter 2 is then reduced during second stage to desired value by irradiating it with protons or nuclei of helium prior to evaporating metal on anode emitter. EFFECT: enhanced transparency of thyristor anode emitter. 2 cl, 1 dwg