FIELD: power semiconductor engineering. SUBSTANCE: turn-off thyristor incorporating homogeneous anode emitter and barrier layer in edge turn-off region is provided with means for shorting out barrier layer through anode with the result that in turn-off state thyristor has diode structure in edge region and turn-off current is not amplified. Heat load in edge region reduces and transistor sustains higher operating temperature at specified voltage. EFFECT: enhanced heat resistance of device. 3 cl, 3 dwg
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