METHOD TO MANUFACTURE POWER SEMICONDUCTOR DEVICE Russian patent published in 2014 - IPC H01L21/336 

FIELD: electricity.

SUBSTANCE: to manufacture a power semiconductor device on the first main side of a substrate (1) of the first type of conductivity they form the first oxide layer (22). Then on the first main side on top of the first oxide layer (22) they form a structured layer (3, 3') of the gate electrode, comprising at least one hole (31). The first alloying admixture of the first type of conductivity is implanted into the substrate (1) at the first main side, using as a mask the structured layer (3, 3') of the gate electrode, and they provide for diffusing of the first alloying admixture into the substrate (1). Then the second alloying admixture of the second type of conductivity is implanted into the substrate (1) at the first main side, and they provide for diffusing of the second alloying admixture into the substrate (1). After diffusion of the first alloying admixture into the substrate (1), but before diffusion of the second alloying admixture into the substrate (1), the first oxide layer (22) is partially removed, and they use a structured layer (3, 3') of the gate electrode as a mask for implantation of the second alloying admixture.

EFFECT: invention provides for development of the method to manufacture a power semiconductor device with low losses of energy in connection condition and with large area of stable operation, besides, which is easier for realisation compared to available methods.

13 cl, 10 dwg