SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURING PROCESS Russian patent published in 1999 - IPC

Abstract RU 2127928 C1

FIELD: computer engineering. SUBSTANCE: device incorporates many locations formed by alternate application of cells with magazine-type capacitor and those with combined magazine-and-slot capacitor along row and column. Each storage electrode of storage cell capacitor is enhanced for overlapping storage electrode of adjacent cell capacitor. Combined magazine-and-slot capacitor is shaped in substrate to increase its storage capacity enabling increase in storage capacity of magazine- type capacitor by enhancing capacitor storage electrode. EFFECT: provision for preventing stepped overlapping, current leakage, and random errors of magazine-and-slot capacitor ensured due to alternating arrangement of cells. 17 cl, 13 dwg

Similar patents RU2127928C1

Title Year Author Number
SEMICONDUCTOR MEMORY DEVICE WITH CAPACITORS FORMED ABOVE AND BELOW MEMORY LOCATION TRANSISTOR (ALTERNATIVES) AND ITS MANUFACTURING PROCESS 1995
  • Li Dzhoo Jang
RU2194338C2
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 1997
  • Li Dzho-Jang
  • Kim Ki-Nam
RU2176423C2
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS (VERSIONS) 1994
  • Ki-Von Kvon
  • Chang-Seok Kang
RU2127005C1
METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH SELF-ALIGNED CONTACT 1997
  • Ban Khio-Dong
  • Choe Khjun-Cheol
  • Choj Chang-Sik
RU2190897C2
METHOD FOR PRODUCING INTEGRATED-CIRCUIT CAPACITOR HAVING IMPROVED CHARACTERISTICS OF ELECTRODE AND INSULATING LAYERS (ALTERNATIVES) AND CAPACITORS PRODUCED BY THIS METHOD 1998
  • Li Seung-Khvan
  • Li Sang-Khiop
  • Kim Jung-Sung
  • Shim Se Dzin
  • Dzin Ju-Chan
  • Mon Dzu-Tae
  • Choj Dzin-Seok
  • Kim Jung-Min
  • Kim Kiung-Khon
  • Nam Kab-Dzin
  • Park Jung-Vok
  • Von Seok-Dzun
  • Kim Jung-Dae
RU2199168C2
MASK (VERSIONS) AND PROCESS OF ITS MANUFACTURE (VERSIONS) 1994
  • Vu-Sung Khan
  • Chang-Dzhin Son
RU2144689C1
HIGH-SPEED AND HIGH-CAPACITY MOS TRANSISTOR AND ITS MANUFACTURING PROCESS 1998
  • Kim Khjun-Sik
  • Sin Kheon-Jong
  • Li Soo-Cheol
RU2197769C2
SEMICONDUCTOR UNBREAKABLE MEMORY UNIT 1992
  • Dzhin-Ki Kim[Kr]
  • Kang-Deog Sukh[Kr]
RU2097842C1
OHMIC CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE AND PROCESS OF ITS MANUFACTURE 1994
  • Sangin Li
  • Soonokh Park
RU2155417C2
IMPROVED MULTI-BIT MAGNETIC MEMORIZING DEVICE WITH ARBITRARY SELECTION AND METHODS OF ITS FUNCTIONING AND MANUFACTURE 2005
  • Chee-Kkheng Lim
RU2310928C2

RU 2 127 928 C1

Authors

Seong-Tae Kim

Kijung-Khan Kim

Dza-Khong Ko

Su-Khan Choj

Dates

1999-03-20Published

1990-11-14Filed