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2 225 055

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IPC

(21) (22)

Application

2002101921/28, 2000-05-30

(24)

Start date

2000-05-30

(22)

Actual filing date

2000-05-30

(45)

Published

2004-02-27

(72)

Inventor

Vaver PeterShpringmann OliverVol'F KonradKhajttssh OlafKhukkel'S KajRennekamp Rajnkhol'DRerikh MaikShtajn Fon Kaminski EhlardKutter KristofLudvig Kristof

(73)

Holder

Infineon Teknolodzhiz Ag

METHOD FOR PRODUCING SEMICONDUCTOR NONVOLATILE MEMORY LOCATION WITH SEPARATE TUNNEL WINDOW Russian patent published in 2004 - IPC

Abstract RU 2225055 C2

FIELD: computer engineering. SUBSTANCE: proposed method for producing semiconductor nonvolatile memory location having separate location with tunnel window involves manufacture of tunnel area during late stage of tunnel implantation (I_t), location with tunnel window being used as mask. EFFECT: reduced space requirement, enlarged number of programming/erasing cycles. 3 cl, 6 dwg

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RU 2 225 055 C2

Authors

Vaver Peter

Shpringmann Oliver

Vol'F Konrad

Khajttssh Olaf

Khukkel'S Kaj

Rennekamp Rajnkhol'D

Rerikh Maik

Shtajn Fon Kaminski Ehlard

Kutter Kristof

Ludvig Kristof

Dates

2004-02-27—Published

2000-05-30—Filed