PRODUCTION OF SEMICONDUCTOR COMPONENT WITH INTEGRATED TRANSVERSE RESISTANCE Russian patent published in 2015 - IPC H01L21/332 

FIELD: electrical engineering.

SUBSTANCE: this method comprises fabrication of solid-state substrate from alloyed semiconductor of the 1^st type conductivity with dopes zone of 2^nd type conductivity. Then, semiconductor substrate surface is masked to expose base zone resistance area. Doping impurity is deposited on resistance exposed zone to form thereat a thin cover ply of 1^st type conductivity with high concentration of doping impurity. Deposited doping impurity is subjected to up-diffusion to transform said thin cover ply into thicker ply of lower concentration of said doping impurity.

EFFECT: highly reproducible resistance at low costs.

6 cl, 3 dwg