FIELD: engineering of devices of volumetric data storage.
SUBSTANCE: device has multiple memorizing devices M with matrix addressing, each one of memorizing devices contains two electrode matrices in form of parallel electrode layers, forming controlling buses and data buses, while electrodes of each electrode matrix are made with high position density and isolated from each other by barrier layer with thickness, being a portion of electrodes thickness, while upper surface of one electrode matrix, directed to next electrode matrix, is provided by parallel grooves, directed orthogonally relatively to electrodes and spatially separated from one another by spaces, close to width of electrodes.
EFFECT: high density of data storage.
6 cl, 19 dwg
