FIELD: powder metallurgy, namely production of composition material that may be used, for example in semiconductor devices. SUBSTANCE: composition material including metal and inorganic particles having thermal expansion factor less than that of used metal and dispersed in metal in such a way that at least 95% of particles (according to their area in cross section) form mutually joined complex-shape aggregates. Material contains no more than 100 separate inorganic particles per 100 sq.micrometers of its cross section area. In temperature range 20 -150 C thermal expansion factor of material increases in average by (0,025-0,035)×10-6/°C at change of heat conductivity at 20C by 1Wt/(m x K). Such material may include copper and copper oxide particles. EFFECT: material having low thermal expansion factor and high heat conductivity and easily subjected to plastic working. 5 cl, 21 dwg, 4 tbl, 11 ex
Title | Year | Author | Number |
---|---|---|---|
COMPOSITE MATERIAL, PROCESS OF ITS PRODUCTION, PANEL OF SEMICONDUCTOR DEVICE EMITTING HEAT, SEMICONDUCTOR DEVICE ( VARIANTS ), DIELECTRIC PANEL AND ELECTROSTATIC ABSORBING FACILITY | 2000 |
|
RU2198949C2 |
SEMICONDUCTOR DEVICE | 1999 |
|
RU2165115C2 |
INSULATION PRINTED CIRCUIT BOARD AND HIGH-POWER SEMICONDUCTOR DEVICE EMPLOYING IT | 2000 |
|
RU2199794C2 |
COMPOSITE MATERIAL BASED ON POWDERED IRON | 2022 |
|
RU2815808C1 |
MATERIAL FOR THE MANUFACTURE OF AN ELECTRODE-TOOL FOR ELECTROEROSION PROCESSING BASED ON COPPER | 2021 |
|
RU2782861C1 |
METHOD FOR MANUFACTURE OF AN ELECTRONIC POWER MODULE BY MEANS OF ADDITIVE TECHNOLOGY AND CORRESPONDING SUBSTRATE AND MODULE | 2018 |
|
RU2750688C2 |
CIRCUIT SUBSTRATE (ALTERNATIVES) AND ITS MANUFACTURING PROCESS | 2000 |
|
RU2204182C2 |
PROCESS FOR MANUFACTURING SILICON CARBIDE BASED CERAMICS | 1992 |
|
RU2018502C1 |
SUPERCONDUCTING COIL | 1992 |
|
RU2109361C1 |
SEMICONDUCTOR NANOSTRUCTURED CERAMIC MATERIAL | 2021 |
|
RU2761338C1 |
Authors
Dates
2003-11-20—Published
1998-12-07—Filed