PROCEDURE ESTABLISHING HEIGHT OF POTENTIAL BARRIER OF DIODE WITH SCHOTTKY BARRIER Russian patent published in 2003 - IPC

Abstract RU 2216750 C2

FIELD: measurement technology, determination of height of potential barrier of diode with Schottky barrier. SUBSTANCE: technical result of invention lies in establishment of height of potential barrier of diode with Schottky barrier by volt-ampere characteristics measured at temperatures T₁ and T₂ for one and same value of current. According to procedure volt-ampere characteristics of n-p junction of diode with Schottky barrier are measured at temperatures T₁ and T₂ for one and same value of current, voltages U₁ and U₂ across n-p junction of specified diode are determined by them and value of potential barrier ϕ_b. is found by formula. EFFECT: establishment of height of potential barrier by volt-ampere characteristics. 1 dwg

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Authors

Dates

2003-11-20—Published

2001-05-15—Filed