FIELD: measurement technology.
SUBSTANCE: according to proposed method semiconductor material with known concentration of current carriers is connected to line with distributed parameters whose length is equal to odd number of quarters of high frequency signal wavelength whose frequency is set greater or smaller than resonance frequency. Corresponding barrier capacitances are determined and calibration characteristics is obtained. Then semiconductor material with unknown concentration of current carriers is connected and corresponding barrier capacitance is determined. Basing of calibrating characteristic, measurable concentration of current carrier is found.
EFFECT: provision of local remove metering of current carrier concentration.
2 tbl, 6 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF REMOTE MEASUREMENT OF LOW CAPACITANCE ON HIGH FREQUENCIES IN ISOLATED VOLUME UNDER ACTION OF HIGH TEMPERATURE, PRESSURE AND RADIATION | 1999 |
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