FIELD: power semiconductor devices.
SUBSTANCE: ultra-fast recovery temperature-resistant diodes with a unipolar-bipolar conduction mechanism in direct connection, including the presence of a differential negative resistance (DNR) on a direct current-voltage characteristic (CVC).
EFFECT: creation of a new reliable design of high-speed high-voltage Schottky diodes with record-breaking ultra-low forward voltage drops up to levels of 0.1÷0.3 volts.
3 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| CRYSTAL OF A HIGH-VOLTAGE HYPERSPEED HIGH-CURRENT DIODE WITH A SCHOTTKY BARRIER AND P-N JUNCTIONS | 2022 |
|
RU2803409C1 |
| ULTRAFAST HIGH VOLTAGE GALLIUM ARSENIDE DIODE CRYSTAL | 2022 |
|
RU2801075C1 |
| CRYSTAL OF A MONOPOLAR-BIPOLAR POWER HIGH-VOLTAGE HYPERVELOCITY GALLIUM ARSENIDE DIODE WITH HETEROJUNCTIONS, WITH PHOTONIC AND PHOTOVOLTAIC PROPERTIES | 2022 |
|
RU2791861C1 |
| HIGH VOLTAGE BIPOLAR TRANSISTOR WITH STATIC INDUCTION | 2023 |
|
RU2805777C1 |
| INTEGRATED SCHOTTKY-pn DIODE ON BASIS OF SILICON CARBIDE | 2009 |
|
RU2390880C1 |
| MULTI-EPITAXIAL STRUCTURE OF DOUBLE-INJECTION HIGH-VOLTAGE HYPER-FAST RECOVERY DIODE CHIP BASED ON GALLIUM AND ARSENIC | 2011 |
|
RU2531551C2 |
| FAST NEUTRON DETECTOR | 2013 |
|
RU2532647C1 |
| METHOD OF MAKING OHMIC CONTACT | 2024 |
|
RU2821299C1 |
| QUANTUM-RADIOISOTOPE GENERATOR OF MOBILE CHARGE CARRIERS AND PHOTONS IN CRYSTAL SEMICONDUCTOR LATTICE | 2015 |
|
RU2654829C2 |
| SEMICONDUCTOR DIODE | 2014 |
|
RU2561779C1 |
