SEMICONDUCTOR STORAGE DEVICE Russian patent published in 2019 - IPC G11C11/15 G11C7/04 G11C7/06 

FIELD: computer equipment.

SUBSTANCE: invention relates to the computer equipment. Semiconductor storage device contains a memory cell; bit line connected to a memory cell; and read circuit connected to the bit line, wherein the reading circuit comprises a first transistor with a first end connected to the bit line and a gate on which the first signal is input; second transistor with a first end connected to the second end of the first transistor and a gate to which a second signal is input; third transistor with a first end connected to the bit line and a gate on which the second signal is input; fourth transistor with a first end connected to the second end of the third transistor and a gate to which the first signal is input; and amplifier connected to the second end of the second transistor and the second end of the fourth transistor, wherein the channel width ratio of the second and third transistors is the same as the channel width ratio of the first and fourth transistors.

EFFECT: technical result is to increase the speed of reading data.

19 cl, 22 dwg