ELECTRON BEAM AMPLIFIER Russian patent published in 2004 - IPC

FIELD: vacuum electronics; image converters. SUBSTANCE: proposed electron-beam amplifier is made in the form of large-gap semiconductor film with negative or small work function for electrons. In order to enhance gain at same resolving power μ, line/mm, film is provided with through holes made so that for any point on film surface there is length of 1/μ, including this point, this length crossing at least two holes disposed on different sides of this point. Film surface whereon primary electron beam is incident may have diamond or gallium nitride area in any circumference of 1/μ in diameter. In order to reduce work function this surface is coated with several single- atom layers of Cs. Amplifier is disposed in electric tractive field whose lines of force are directed so that secondary electrons emitted from surface whereon primary beam is incident pass through holes to opposite side of film. EFFECT: enhanced gain of image converter. 3 cl, 3 dwg