HETEROJUNCTION STRUCTURE Russian patent published in 2013 - IPC H01J1/34 B82B1/00 

FIELD: electricity.

SUBSTANCE: according to the invention, heterojunction structure consists of semiconductor layers of n and p type of conductivity, which are located in series on a substrate of n type, homogeneous to semiconductor layers of n type, which are adjacent to it, and having ohmic contact to rear side. With that, on surface of n layer on the side of n-p heteroboundary there located is a massif of nanostructured objects; p layer is made in the form of a diamond film, the thickness of which does not exceed diffusion length of electrons, and concentration of acceptors in it is in the range of 10²⁰-10²⁴ m^-3.

EFFECT: possibility of considerable increase of operating currents of a field radiating cathode, or field-emission diodes, increase of stability of devices to degradation and increase of their life cycle.

6 cl, 1 ex, 6 dwg