FIELD: chemistry.
SUBSTANCE: mask from a dielectric or metal is produced before the growth of a diamond film on a substrate with a flat surface, which ensures the submicron size of the mask, with the following formation on the mask of the diamond film and opening of a window from the side of the substrate, which ensures access from the side of the substrate to reagents for etching the diamond film through the mask.
EFFECT: formation of the submicron mask for etching the diamond film before the growth of diamond film.
6 dwg, 1 tbl
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