FIELD: electronic engineering; image converters. SUBSTANCE: electron flow intensifier is made in the form of solid state strip with electron flow incident on one of its sides and with secondary electron emission occurring on its opposite side; novelty is that resolving power μ measured in line/mm is enhanced by making active region of intensifier in the form of semiconductor material whose thickness h does not exceed 1/μ. Active region of intensifier may be made of diamond film or of group A3B5 material. Secondary electron flow is enhanced by covering secondary-electron emission surface with additional layers of metals having low photoelectric work function or with their oxides. So, effective region of intensifier is made in the form of combination of non-contacting active regions whose density ρ referred to 1 sq. mm is related to resolving power through expression or combination of active regions possessing configuration enabling easy superposition of round-holes stencil onto effective region; density ρ of these round holes meets condition so that active region will reside under each hole in effective region. EFFECT: enhanced resolving power and mechanical strength; intensified secondary electron flow. 3 cl, 3 dwg
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Authors
Dates
2004-01-10—Published
2000-06-15—Filed