NEUTRON DETECTOR Russian patent published in 2010 - IPC G01T1/24 

FIELD: chemistry.

SUBSTANCE: solid-body integrated single-chip neutron detector has a semiconductor substrate with an ohmic contact to its rear side, and the following layers lying in series on the front face: a semiconductor layer which is of the same type as the substrate, a high-resistance semiconductor layer, a semiconductor layer with conductivity type which is opposite that of the substrate and a contact layer placed on the latter, where the two last layers are in form of galvanically unconnected regions. There is an additional microstructured layer of diamond C (B), which is doped with boron before degeneration, which lies on the said contact layer and a second contact layer which lies on the front face of the said diamond microstructured layer. The single-chip integrated structure enables conversion of a stream of neutrons into a stream of α-particles in the diamond film which is doped with boron and conversion of the stream of α-particles into a stream of secondary electrons, and then in the high-resistance receiving-converting layer Si p-i-n of the detector structure into nonequilibrium electron-hole pairs with their subsequent pickup in form of current in an external circuit.

EFFECT: improved method.

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