FIELD: pulse engineering; contactless switching devices. SUBSTANCE: power switch built around MIS transistor 9 has transformer with primary winding 2 and secondary winding 3, similar-conductivity transistors 7 and 8 with resistor 6 inserted between their bases. Emitters of transistors 7 and 8 are connected to secondary winding 3 of transformer 1 and collectors, to gate-source junction of MIS transistor 9. Base-emitter junctions of transistors 7 and 8 are shorted out by diodes 4 and 5 in cut-off direction. EFFECT: enhanced reliability. 1 cl, 1 dwg
Title | Year | Author | Number |
---|---|---|---|
FORCE KEY ON MIS-TRANSISTOR | 2004 |
|
RU2257668C1 |
FORCE KEY ON MIS-TRANSISTOR | 2004 |
|
RU2262799C1 |
POWER SWITCH BUILT AROUND MIS TRANSISTOR | 2004 |
|
RU2263393C1 |
POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340084C1 |
FORCE KEY BUILT ON MIS-TRANSISTOR | 2004 |
|
RU2262187C1 |
POWER KEY ON MIS TRANSISTOR | 2009 |
|
RU2396706C1 |
POWER KEY FOR DTM-TRANSISTOR | 2007 |
|
RU2338316C1 |
MIS TRANSISTOR POWER KEY | 2008 |
|
RU2358383C1 |
POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340085C1 |
POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340086C1 |
Authors
Dates
2004-02-10—Published
2001-07-02—Filed