POWER SWITCH BUILT AROUND MIS TRANSISTOR Russian patent published in 2004 - IPC

FIELD: pulse engineering; contactless switching devices. SUBSTANCE: power switch built around MIS transistor 9 has transformer with primary winding 2 and secondary winding 3, similar-conductivity transistors 7 and 8 with resistor 6 inserted between their bases. Emitters of transistors 7 and 8 are connected to secondary winding 3 of transformer 1 and collectors, to gate-source junction of MIS transistor 9. Base-emitter junctions of transistors 7 and 8 are shorted out by diodes 4 and 5 in cut-off direction. EFFECT: enhanced reliability. 1 cl, 1 dwg