FORCE KEY ON MIS-TRANSISTOR Russian patent published in 2005 - IPC

Abstract RU 2257668 C1

FIELD: electric engineering.

SUBSTANCE: transformer 5 is made with additional branches 13, 14 forming two additional windings relatively to edge outputs, while each branch 13 and 14 through resistor 11 and 12 is connected to transistor base 1 and 2, emitter of which is connected to edge output 8 and 9 of same additional winding. Collector-emitter links of transistor 1 and 2 are linked by diodes 3 and 4 in locking direction. Collector of transistor 1 is connected to latch, and collector 2 - to source of MIS transistor.

EFFECT: higher reliability, higher efficiency.

1 dwg

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RU 2 257 668 C1

Authors

Sokolov M.I.

Mikheev P.V.

Rudenko V.N.

Dates

2005-07-27Published

2004-02-02Filed