POWER KEY ON MIS TRANSISTOR Russian patent published in 2010 - IPC H03K17/567 

FIELD: electricity.

SUBSTANCE: to power key on MIS transistor, which contains transformer, transistors of similar conductivity, the collector-emitter junctions of which are shunted with diodes in locking direction, and base-emitter junctions - with resistors, collector of one of transistors is connected to the gate of MIS transistor, emitters of transistors are directly connected, and collector of the other transistor is connected to the beginning of secondary transformer winding the end of which is directly connected to the source of MIS transistor, additional secondary transformer winding is connected to bases of transistors; the beginning of additional winding is connected to the base of that transistor the collector of which is connected to the beginning of secondary transformer winding. To the device there introduced is additional resistor, diode and bipolar transistor of similar conductivity of MIS transistor; at that, the first output of additional resistor is connected to the source of MIS transistor and to the base of additional transistor the collector of which is connected through additional diode in conducting direction to the gate of MIS transistor; the second output of additional resistor is connected to emitter of additional transistor and output of the key.

EFFECT: improving reliability during operation for capacitive load.

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