FIELD: electricity.
SUBSTANCE: proposed invention relates to the field of pulse engineering. The technical effect is due to the first and the second diode bridges having been integrated in a MIS transistor power key containing a transformer with a secondary winding and an additional secondary winding with the secondary winding end being connected immediately to the MIS resistor source; a transistor whose base-emitter junction is resistor-shunted and a limiting resistor. The first diode bridge input is connected between the secondary winding beginning and the MIS transistor gate with the enabling polarity output connected to the transistor collector-emitter junction. The second diode bridge input is connected to the additional secondary winding with the enabling polarity output connected to the transistor base-emitter junction via a limiting resistor.
EFFECT: reliability improvement.
1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| MIS TRANSISTOR POWER KEY | 2008 |
|
RU2390094C2 |
| POWER KEY ON MDS-TRANSISTOR | 2014 |
|
RU2571719C1 |
| FORCE KEY ON MIS-TRANSISTOR | 2004 |
|
RU2257668C1 |
| POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340084C1 |
| POWER KEY ON MIS TRANSISTOR | 2007 |
|
RU2340085C1 |
| POWER KEY ON MIS TRANSISTOR | 2009 |
|
RU2396706C1 |
| MIS TRANSISTOR POWER KEY | 2011 |
|
RU2469473C1 |
| POWER KEY FOR DTM-TRANSISTOR | 2007 |
|
RU2338316C1 |
| POWER SWITCH BUILT AROUND MIS TRANSISTOR | 2004 |
|
RU2263393C1 |
| FORCE KEY BUILT ON MIS-TRANSISTOR | 2004 |
|
RU2262187C1 |
