METHOD FOR MANUFACTURING MICROELECTRONIC/MICROMECHANICAL DEVICES AND ELECTRONIC CONTROL CIRCUITS IN SINGLE PROCESS CYCLE Russian patent published in 2004 - IPC

FIELD: microfabrication technology. SUBSTANCE: method designed for producing oxide insulating layer on semiconductor wafer by way of oxidation in dry oxygen and low-pressure chemical vapor deposition (LPCVD) includes LPCVD of silicon nitride shielding film; LPCVD of first polycrystalline silicon layer and lithographic formation of microtube and micromechanical device pattern in first polycrystalline silicon layer; deposition of first wearing silicon-oxide layer and lithographic formation of contact window pattern in first silicon oxide layer; LPCVD of second polycrystalline silicon layer and lithographic formation of pattern of microtube and micromechanical component electrodes in second polycrystalline layer; deposition of second wearing silicon oxide layer, mechanochemical polishing of second silicon oxide layer, and lithographic formation of contact window pattern in second layer; LPCVD of third polycrystalline silicon layer and lithographic formation of pattern of microtube and micromechanical component electrodes in third polycrystalline layer; deposition of metal layer and lithographic formation of emissive components pattern of microtubes and micromechanical components; removal of wearing layers by means of liquid or gas etching and wafer drying. Microelectronic/micromechanical device and electronic control circuit are produced concurrently in a single process cycle. Devices and control circuits produced in this way are capable of withstanding specific impacts and high temperatures amounting to 500 C. EFFECT: reduced quantity of operations involved in process; enhanced yield. 2 cl, 9 dwg